65LPe RFCMOS Solution

The 65LPe RFCMOS is built on the foundation of GLOBALFOUNDRIES leading-edge 65nm Low-Power enhanced process. A significant benefit in having process and model compatibility between the baseband and RF processes is that IPs designed for baseband products are fully transferrable to the RFCMOS SoC solution. This provides customers an intuitive product roadmap that includes releasing a baseband product to market quickly, and then following up with a single chip RF SoC that provides a higher level of integration, lower system power consumption, and smaller PCB footprint.

With its suite of RF components, low leakage transistors, VNCAP (metal-oxide-metal capacitor), MIM (metal-insulator-metal capacitor), thick metal inductors, varactors, the 65LPe RFCMOS process provides an ideal platform for low power and high performance SoC solutions. Highly integrated RFCMOS solution for Bluetooth, WiFi and GPS prevalent in single chip solution today can be developed and manufactured.

The highly accurate models (including global and local mismatch Monte Carlo variations) cover both performance and functional corners. The 65LPe-RF physical design kit has been enhanced with a wide-range of scalable parameterized cells, inductors and VNCAP synthesizers. In addition, models for substrate noise analysis gives designers the tools and capability to simulate their silicon accurately, which will avoid costly respins and reduce the overall design cycle time and achieve faster time to production.

RFCMOS Process Technology

• Triple (Deep Nwell) Well Isolation
• Low Leakage Multi-Vt FET
• MOS Varactors
• 3um Copper Thick Metal Inductors
• MIM Capacitors
• VNCAP (Metal-Oxide-Metal Capacitors)
• Precision Poly Resistor

Design Kit Features

• BSIM 4.5 FET Models
• Inductors Synthesis
• VNCAP Synthesis
• Substrate Noise Analysis
• Highly Scalable Parameterized Cells